摘要 :
Boron diffusion in MgO has been investigated in annealed film stacks of sputtered CoFeB|MgO using transmission electron microscopy and parallel electron energy loss spectroscopy. The analyses show significant B movement when the f...
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Boron diffusion in MgO has been investigated in annealed film stacks of sputtered CoFeB|MgO using transmission electron microscopy and parallel electron energy loss spectroscopy. The analyses show significant B movement when the films are annealed, with the formation of BO_x complexes. Characteristic diffusion lengths have been estimated in films annealed at the commonly employed temperature range of 300-400 ℃ for the fabrication of magnetic tunnel junctions. An activation energy of 1.3 eV (±0.4 eV) has been extracted from these data that represent B diffusion in MgO through vacancies and defect states mediated by the formation of BO_x complexes.
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